201008121-3 adva nced power electronics corp. 1/5 AP18T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol value unit thermal data parameter advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. g d s bv 100v fast switching speed r 160mw simple drive requirement low gate charge rohs-compliant , halogen-free i 9 a rthj- c maximum thermal resistance, junction-case rthj- a maximum thermal resistance, junction-ambient 62 c /w 4.5 c /w o rdering information AP18T10GP-HF-3 t b : in rohs-compliant halogen-free to-22 0 , shipped in tubes, (50 p cs/ tube ) the to-22 0 through-hole package is widely used in co mmercial and industrial applications where a small pcb footprint or an attached heatsink are required. g d s d (tab) to-220 (p) symbol units v ds v v gs i d at t c =2 5 c i d at t c =10 0 c i dm p d at t c =2 5 c t stg t j parameter rating drain-source voltage 100 gate-source voltage 20 v continuous drain current 9 a storage temperature range continuous drain current 5.6 a pulsed drain curren t 1 30 a total power dissipation 28 w -55 to 150 c operating junction temperature range -55 to 150 c
adva nced power electronics corp. 2/5 AP18T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) notes: 1.pulse width limited by maximum junction temperature. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2.pulse width < 300us , duty cycle < 2%. source-drain diode symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 160 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 5.6 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =20v, v ds =0v - - 100 na q g total gate charge 2 i d =5a - 10 16 nc q gs gate-source charge v ds =80v - 2.5 - nc q gd gate-drain ("miller") charge v gs =10v - 4.5 - nc t d(on) turn-on delay time 2 v ds =50v - 6.5 - ns t r rise time i d =5a - 10 - ns t d(off) turn-off delay time r g =3.3w -13- ns t f fall time v gs =10v - 3.4 - ns c iss input capacitance v gs =0v - 425 680 pf c oss output capacitance v ds =25v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 33 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =5a, v gs =0v - 53 - ns q rr reverse recovery charge di/dt=100a/s - 130 - nc
adva nced power electronics corp. 3/5 AP18T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics j 0 4 8 12 16 20 02 468 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c =2 5 o c 10 v 7. 0 v 6.0 v 5.0 v v g =4 . 5 v 0 4 8 12 16 20 04 8 1 2 1 6 2 0 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c = 150 o c 10 v 9.0 v 8.0v 7.0v v g = 5.0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d r ds(on) i d =5a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a ) t j =25 o c t j =150 o c 120 160 200 240 280 456 789 1 0 v gs gate-to-source voltage (v) r ds(on) ( m w ) i d =5a t c =25 o c 1.4 1.8 2.2 2.6 3.0 -50 0 50 100 150 t j , junction temperature ( o c) v gs(t h) (v )
adva nced power electronics corp. 4/5 AP18T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10 v q gs q gd q g charge typical electrical characteristics (cont.) g 0 2 4 6 8 10 12 024681 01 2 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =80v i d =5a 10 100 1000 1 5 9 1 31 72 12 52 9 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on)
adva nced power electronics corp. 5/5 AP18T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information product: ap18t10 gp = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 2.54 ref. 7.4 ref. symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 18t10gp ywwsss f l5 e d1
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